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| VCE IC = = 2500 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200E250100 Doc. No. 5SYA 1557-02 July 04 * Low-loss, rugged SPT chip-set * Smooth switching SPT chip-set for good EMC * Industry standard package * High power density * AlSiC base-plate for high power cycling capability * AlN substrate for low thermal resistance Maximum rated values Parameter Collector-emitter voltage DC collector current Peak collector current Gate-emitter voltage Total power dissipation DC forward current Peak forward current Surge current IGBT short circuit SOA Isolation voltage Junction temperature Junction operating temperature Case temperature Storage temperature Mounting torques 1) 2) 2) 1) Symbol VCES IC ICM VGES Ptot IF IFRM IFSM tpsc Visol Tvj Tvj(op) Tc Tstg M1 M2 M3 Conditions VGE = 0 V Tc = 80 C tp = 1 ms, Tc = 80 C min max 2500 1200 2400 Unit V A A V W A A A s V C C C C Nm -20 Tc = 25 C, per switch (IGBT) 20 11000 1200 2400 VR = 0 V, Tvj = 125 C, tp = 10 ms, half-sinewave VCC = 1900 V, VCEM CHIP 2500 V VGE 15 V, Tvj 125 C 1 min, f = 50 Hz -40 -40 -40 Base-heatsink, M6 screws Main terminals, M8 screws Auxiliary terminals, M4 screws 4 8 2 11000 10 5000 150 125 125 125 6 10 3 Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 For detailed mounting instructions refer to ABB Document No. 5SYA2039 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SNA 1200E250100 IGBT characteristic values Parameter Collector (-emitter) breakdown voltage Collector-emitter 4) saturation voltage Collector cut-off current Gate leakage current Gate-emitter threshold voltage Gate charge Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time 3) Symbol V(BR)CES VCE sat ICES IGES VGE(TO) Qge Cies Coes Cres td(on) tr td(off) tf Conditions VGE = 0 V, IC = 10 mA, Tvj = 25 C IC = 1200 A, VGE = 15 V VCE = 2500 V, VGE = 0 V Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C min 2500 2.2 2.8 typ max Unit V 2.5 3.1 60 2.9 3.4 12 120 500 7.5 V V mA mA nA V C VCE = 0 V, VGE = 20 V, Tvj = 125 C IC = 240 mA, VCE = VGE, Tvj = 25 C IC = 1200 A, VCE = 1250 V, VGE = -15 V .. 15 V VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 C VCC = 1250 V, IC = 1200 A, RG = 1.5 , VGE = 15 V, L = 100 nH, inductive load VCC = 1250 V, IC = 1200 A, RG = 1.5 , VGE = 15 V, L = 100 nH, inductive load VCC = 1250 V, IC = 1200 A, VGE = 15 V, RG = 1.5 , L = 100 nH, inductive load VCC = 1250 V, IC = 1200 A, VGE = 15 V, RG = 1.5 , L = 100 nH, inductive load Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C -500 5 12.2 186 13.7 2.98 375 365 240 250 875 980 300 345 820 nF ns ns ns ns Turn-on switching energy Eon mJ 1150 980 mJ 1250 5800 10 A nH m Turn-off switching energy Short circuit current Module stray inductance Resistance, terminal-chip 3) 4) Eoff ISC L CE RCC'+EE' tpsc 10 s, VGE = 15 V, Tvj = 125 C, VCC = 1900 V, VCEM CHIP 2500 V TC = 25 C TC = 125 C 0.06 0.085 Characteristic values according to IEC 60747 - 9 Collector-emitter saturation voltage is given at chip level ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1557-02 July 04 page 2 of 9 5SNA 1200E250100 Diode characteristic values Parameter Forward voltage 6) 5) Symbol VF Irr Qrr trr Erec Conditions IF = 1200 A Tvj = 25 C Tvj = 125 C Tvj = 25 C VCC = 1250 V, IF = 1200 A, VGE = 15 V, RG = 1.5 L = 100 nH inductive load Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C min 1.5 1.4 typ 1.75 1.8 965 1180 680 1150 1250 1710 580 960 max 2.0 2.0 Unit V A C ns mJ Reverse recovery current Recovered charge Reverse recovery time Reverse recovery energy 5) 6) Characteristic values according to IEC 60747 - 2 Forward voltage is given at chip level Thermal properties Parameter IGBT thermal resistance junction to case Diode thermal resistance junction to case Thermal resistance case to heatsink 2) 2) Symbol Rth(j-c)IGBT Rth(j-c)DIODE Rth(c-h) Conditions min typ max Unit 0.009 K/W 0.017 K/W per module, grease = 1W/m x K 0.006 K/W For detailed mounting instructions refer to ABB Document No. 5SYA2039 Mechanical properties Parameter Dimensions Clearance distance Surface creepage distance Weight Symbol LxW DC DSC x Conditions according to IEC 60664-1 Term. to base: and EN 50124-1 Term. to term: according to IEC 60664-1 Term. to base: and EN 50124-1 Term. to term: min 23 19 33 32 typ max Unit mm mm mm H Typical , see outline drawing 190 x 140 x 38 1500 g ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1557-02 July 04 page 3 of 9 5SNA 1200E250100 Electrical configuration Outline drawing 2) Note: all dimensions are shown in mm 2) For detailed mounting instructions refer to ABB Document No. 5SYA2039 This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX. This product has been designed and qualified for Industrial Level. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1557-02 July 04 page 4 of 9 5SNA 1200E250100 2400 2200 2000 25 C 1800 125 C 1600 1400 IC [A] 1200 1000 800 600 400 200 0 0 1 2 VCE [V] 3 4 5 VGE = 15 V IC [A] 2400 2200 2000 1800 1600 1400 1200 1000 800 600 400 200 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 VGE [V] 125 C 25 C Fig. 1 Typical on-state characteristics, chip level Fig. 2 Typical transfer characteristics, chip level 2400 2200 2000 1800 1600 1400 IC [A] 1200 1000 800 600 400 200 0 0 1 2 3 VCE [V] 4 5 6 9V IC [A] 17 V 15 V 13 V 11 V 2400 2200 2000 1800 1600 1400 1200 1000 800 600 400 Tvj = 25C 200 0 0 1 2 3 VCE [V] 4 5 6 Tvj = 125 C 17 V 15 V 13 V 11 V 9V Fig. 3 Typical output characteristics, chip level Fig. 4 Typical output characteristics, chip level ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1557-02 July 04 page 5 of 9 5SNA 1200E250100 3.5 VCC = 1250 V RG = 1.5 ohm VGE = 15 V Tvj = 125 C L = 100 nH 6 VCC = 1250 V IC = 1200 A VGE = 15 V Tvj = 125 C L = 100 nH 3.0 5 Eon 4 2.5 Eon, Eoff [J] 2.0 Eoff 1.5 Eon, Eoff [J] Eon 3 2 1.0 1 E sw [mJ] = 325 x 10 -6 x I C 2 + 1.31 x I C +347 Eoff 0.5 0.0 0 500 1000 IC [A] 1500 2000 2500 0 0 5 RG [ohm] 10 15 Fig. 5 Typical switching energies per pulse vs collector current Fig. 6 Typical switching energies per pulse vs gate resistor 10 10 VCC = 1250 V IC = 1200 A VGE = 15 V Tvj = 125 C L = 100 nH td(off) td(off) td(on), tr, td(off), tf [s] 1 td(on), tr, td(off), tf tf td(on) tr 1 td(on) 0.1 tr VCC = 1250 V RG = 1.5 ohm VGE = 15 V Tvj = 125 C L = 100 nH tf 0.01 0 500 1000 IC [A] 1500 2000 2500 0.1 0 5 10 RG [ohm] 15 20 Fig. 7 Typical switching times vs collector current Fig. 8 Typical switching times vs gate resistor ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1557-02 July 04 page 6 of 9 5SNA 1200E250100 1000 20 VGE = 0 V fOSC = 1 MHz VOSC = 50 mV Cies 15 VCC = 1250 V VCC = 1800 V 100 VGE [V] C [nF] Coes 10 10 Cres 5 IC = 1200 A Tvj = 25 C 1 0 5 10 15 20 VCE [V] 25 30 35 0 0 2 4 6 Qg [C] 8 10 12 Fig. 9 Typical capacitances vs collector-emitter voltage Fig. 10 Typical gate charge characteristics 2.5 VCC 1900 V, Tvj = 125 C VGE = 15 V, RG = 1.5 ohm 2 1.5 ICpulse / IC 1 0.5 Chip Module 0 0 500 1000 1500 VCE [V] 2000 2500 3000 Fig. 11 Turn-off safe operating area (RBSOA) ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1557-02 July 04 page 7 of 9 5SNA 1200E250100 1600 1400 1200 Erec [mJ], Irr [A], Qrr [C] 1000 800 600 VCC = 1250 V RG = 1.5 ohm VGE = 15 V Tvj = 125 C L = 100 nH Qrr Irr Erec 1200 VCC = 1250 V IF = 1200 A Tvj = 125 C L = 100 nH 1800 1000 1500 Irr Qrr 1200 Irr [A], Qrr [Q] 800 RG = 1.5 ohm Erec [mJ] 400 400 200 200 E rec [mJ] = -1.86 x 10 -4 x I F 2 + 0.903 x I F + 181 RG = 15 ohm RG = 6.8 ohm RG = 3.9 ohm Erec RG = 2.7 ohm 600 RG = 1.0 ohm 900 600 300 0 0 500 1000 IF [A] 1500 2000 2500 0 0 1 2 3 4 5 6 di/dt [kA/s] 0 Fig. 12 Typical reverse recovery characteristics vs forward current Fig. 13 Typical reverse recovery characteristics vs di/dt 2400 2200 2000 1800 1600 1400 IF [A] 1200 1000 800 125 C 25 C 2800 VCC 1900 V di/dt 8000 A/s Tvj = 125 C 2400 2000 1600 IR [A] 1200 800 400 0 0 0.5 1 VF [V] 1.5 2 2.5 600 400 200 0 0 500 1000 1500 VR [V] 2000 2500 3000 Fig. 14 Typical diode forward characteristics, chip level Fig. 15 Safe operating area diode (SOA) ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1557-02 July 04 page 8 of 9 5SNA 1200E250100 0.1 Analytical function for transient thermal impedance: Zth(j-h) [K/W] IGBT, DIODE Zth(j-c) Diode 0.01 Zth(j-c) IGBT Z th (j-c) (t) = R i (1 - e -t/ i ) i =1 2 1.685 20.4 2.92 29.3 i IGBT n 1 6.287 194.7 11.54 203.4 3 0.685 1.98 1.28 6.96 4 0.337 0.52 1.27 1.5 5 Ri(K/kW) i(ms) Ri(K/kW) i(ms) 0.001 0.0001 0.001 0.01 0.1 t [s] 1 10 Fig. 16 Thermal impedance vs time ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors DIODE Doc. No. 5SYA 1557-02 July 04 |
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